Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer

Hyun Gi Hong; Woong Ki Hong; Keun Yong Ban; Takhee Lee; Tae Yeon Seong; June O. Song; I. T. Ferguson; Joon Seop Kwak

doi:10.1149/1.2030470

Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer

Hyun Gi Hong, Woong Ki Hong, Keun Yong Ban, Takhee Lee, Tae Yeon Seong, June O. Song, I. T. Ferguson, Joon Seop Kwak

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on the formation of high-quality ohmic contacts to p-GaN (N _a = 4 × 10¹⁷/cm³) for UV flip-chip light-emitting diodes (LEDs) using a tin-zinc oxide (TZO) interlayer. It is shown that the TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10^-4 Ω cm² and reflectance of 76% at 405 nm when annealed at 530°C. Near-UV LEDs made with the annealed TZO/Ag p-contacts give forward-bias voltage of 3.26 V at 20 mA, and higher output power than those with single Ag contacts. Based on transmission electron microscopy and electrical results, possible ohmic formation mechanisms are discussed.

Original language	English
Pages (from-to)	G280-G282
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/1.2030470
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Cite this

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title = "Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer",

abstract = "We report on the formation of high-quality ohmic contacts to p-GaN (N a = 4 × 1017/cm3) for UV flip-chip light-emitting diodes (LEDs) using a tin-zinc oxide (TZO) interlayer. It is shown that the TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ω cm2 and reflectance of 76% at 405 nm when annealed at 530°C. Near-UV LEDs made with the annealed TZO/Ag p-contacts give forward-bias voltage of 3.26 V at 20 mA, and higher output power than those with single Ag contacts. Based on transmission electron microscopy and electrical results, possible ohmic formation mechanisms are discussed.",

author = "Hong, {Hyun Gi} and Hong, {Woong Ki} and Ban, {Keun Yong} and Takhee Lee and Seong, {Tae Yeon} and Song, {June O.} and Ferguson, {I. T.} and Kwak, {Joon Seop}",

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T1 - Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer

AU - Hong, Hyun Gi

AU - Hong, Woong Ki

AU - Ban, Keun Yong

AU - Lee, Takhee

AU - Seong, Tae Yeon

AU - Song, June O.

AU - Ferguson, I. T.

AU - Kwak, Joon Seop

PY - 2005

Y1 - 2005

N2 - We report on the formation of high-quality ohmic contacts to p-GaN (N a = 4 × 1017/cm3) for UV flip-chip light-emitting diodes (LEDs) using a tin-zinc oxide (TZO) interlayer. It is shown that the TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ω cm2 and reflectance of 76% at 405 nm when annealed at 530°C. Near-UV LEDs made with the annealed TZO/Ag p-contacts give forward-bias voltage of 3.26 V at 20 mA, and higher output power than those with single Ag contacts. Based on transmission electron microscopy and electrical results, possible ohmic formation mechanisms are discussed.

AB - We report on the formation of high-quality ohmic contacts to p-GaN (N a = 4 × 1017/cm3) for UV flip-chip light-emitting diodes (LEDs) using a tin-zinc oxide (TZO) interlayer. It is shown that the TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ω cm2 and reflectance of 76% at 405 nm when annealed at 530°C. Near-UV LEDs made with the annealed TZO/Ag p-contacts give forward-bias voltage of 3.26 V at 20 mA, and higher output power than those with single Ag contacts. Based on transmission electron microscopy and electrical results, possible ohmic formation mechanisms are discussed.

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Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin-zinc oxide interlayer

Abstract

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