Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiNx/Al

Dong Seok Leem; Jeong Tae Maeng; Dae Yong Lee; Tae Yeon Seong

doi:10.1149/1.1911999

Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiN_x/Al

Dong Seok Leem, Jeong Tae Maeng, Dae Yong Lee, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated Ag (2.5 nm)/TiN_x (50 nm)/Al (200 nm) contacts for use in GaN-based flip-chip light emitting diodes (LEDs). The Ag/TiN_x/Al contact becomes ohmic with specific contact resistance of 4.4 × 10^-3 Ω cm² when annealed at 430°C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiN_x barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiN_x/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts.

Original language	English
Pages (from-to)	G150-G152
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	6
DOIs	https://doi.org/10.1149/1.1911999
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1911999

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title = "Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiNx/Al",

abstract = "We have investigated Ag (2.5 nm)/TiNx (50 nm)/Al (200 nm) contacts for use in GaN-based flip-chip light emitting diodes (LEDs). The Ag/TiNx/Al contact becomes ohmic with specific contact resistance of 4.4 × 10-3 Ω cm2 when annealed at 430°C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts.",

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T1 - Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiNx/Al

AU - Leem, Dong Seok

AU - Maeng, Jeong Tae

AU - Lee, Dae Yong

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - We have investigated Ag (2.5 nm)/TiNx (50 nm)/Al (200 nm) contacts for use in GaN-based flip-chip light emitting diodes (LEDs). The Ag/TiNx/Al contact becomes ohmic with specific contact resistance of 4.4 × 10-3 Ω cm2 when annealed at 430°C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts.

AB - We have investigated Ag (2.5 nm)/TiNx (50 nm)/Al (200 nm) contacts for use in GaN-based flip-chip light emitting diodes (LEDs). The Ag/TiNx/Al contact becomes ohmic with specific contact resistance of 4.4 × 10-3 Ω cm2 when annealed at 430°C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts.

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Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiN_x/Al

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