Abstract
We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.
Original language | English |
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Title of host publication | IEEE International Symposium on Compound Semiconductors, Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 55-56 |
Number of pages | 2 |
Volume | 2003-January |
ISBN (Print) | 0780378202 |
DOIs | |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27 |
Other
Other | 2003 International Symposium on Compound Semiconductors, ISCS 2003 |
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Country/Territory | United States |
City | San Diego |
Period | 03/8/25 → 03/8/27 |
Keywords
- Contact resistance
- Electrical resistance measurement
- Electrons
- Gallium nitride
- Materials science and technology
- Ohmic contacts
- Optical films
- Photoelectricity
- Rapid thermal annealing
- Spectroscopy
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials