Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

J. O. Song; Dong Seok Leem; K. K. Kim; Tae Yeon Seong

doi:10.1109/ISCS.2003.1239903

Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

J. O. Song
, Dong Seok Leem
, K. K. Kim
, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10^-5-10^-6 Ωcm². Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

Original language	English
Title of host publication	IEEE International Symposium on Compound Semiconductors, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	55-56
Number of pages	2
Volume	2003-January
ISBN (Print)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239903
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	03/8/25 → 03/8/27

Keywords

Contact resistance
Electrical resistance measurement
Electrons
Gallium nitride
Materials science and technology
Ohmic contacts
Optical films
Photoelectricity
Rapid thermal annealing
Spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239903

Cite this

Song, J. O., Leem, D. S., Kim, K. K., & Seong, T. Y. (2003). Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 55-56). Article 1239903 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239903

Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. / Song, J. O.; Leem, Dong Seok; Kim, K. K. et al.
IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 55-56 1239903.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Song, JO, Leem, DS, Kim, KK & Seong, TY 2003, Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239903, Institute of Electrical and Electronics Engineers Inc., pp. 55-56, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239903

@inproceedings{67b82db77198475eb17461b9ce0ebe23,

title = "Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides",

abstract = "We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.",

keywords = "Contact resistance, Electrical resistance measurement, Electrons, Gallium nitride, Materials science and technology, Ohmic contacts, Optical films, Photoelectricity, Rapid thermal annealing, Spectroscopy",

author = "Song, \{J. O.\} and Leem, \{Dong Seok\} and Kim, \{K. K.\} and Seong, \{Tae Yeon\}",

year = "2003",

doi = "10.1109/ISCS.2003.1239903",

language = "English",

isbn = "0780378202",

volume = "2003-January",

pages = "55--56",

booktitle = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

}

TY - GEN

T1 - Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

AU - Song, J. O.

AU - Leem, Dong Seok

AU - Kim, K. K.

AU - Seong, Tae Yeon

PY - 2003

Y1 - 2003

N2 - We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

AB - We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

KW - Contact resistance

KW - Electrical resistance measurement

KW - Electrons

KW - Gallium nitride

KW - Materials science and technology

KW - Ohmic contacts

KW - Optical films

KW - Photoelectricity

KW - Rapid thermal annealing

KW - Spectroscopy

UR - https://www.scopus.com/pages/publications/84943544779

UR - https://www.scopus.com/pages/publications/84943544779#tab=citedBy

U2 - 10.1109/ISCS.2003.1239903

DO - 10.1109/ISCS.2003.1239903

M3 - Conference contribution

AN - SCOPUS:84943544779

SN - 0780378202

VL - 2003-January

SP - 55

EP - 56

BT - IEEE International Symposium on Compound Semiconductors, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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