Abstract
The formation of Ni-Mg solid solution/Au schemes for the formation of low resistance and transparent ohmic contacts to p-GaN was investigated. The light transmittance of the 550°C contacts was measured to be 79% and 95.6% at 460 nm for the contacts with the individual layer thickness of 8 and 5 nm. The results indicated that the solid solution is a promising metallization scheme for the fabrication of high performance optical devices.
Original language | English |
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Pages (from-to) | 3513-3515 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2003 Oct 27 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)