Abstract
The formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer was investigated. The specific contact resistivity was determined by using a circular-transmission line method. It was shown that the as-deposited Al\Pt contacts produce a specific contact resistivity of 1.2×10-5 ωcm2.
Original language | English |
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Pages (from-to) | 4225-4227 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2003 Sept 15 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy