The formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer was investigated. The specific contact resistivity was determined by using a circular-transmission line method. It was shown that the as-deposited Al\Pt contacts produce a specific contact resistivity of 1.2×10-5 ωcm2.
ASJC Scopus subject areas
- General Physics and Astronomy