Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation

Min Suk Oh; Ja Soon Jang; Sang Ho Kim; Tae Yeon Seong

doi:10.1002/pssc.200565201

Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation

Min Suk Oh, Ja Soon Jang, Sang Ho Kim, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

KrF excimer-laser-irradiation treatment in a N₂ atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N ₂ ambient become ohmic with specific contact resistance of 8.9(±0.6)×10^-5 Ωcm². Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.

Original language	English
Pages (from-to)	1717-1720
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565201
Publication status	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200565201

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title = "Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation",

abstract = "KrF excimer-laser-irradiation treatment in a N2 atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N 2 ambient become ohmic with specific contact resistance of 8.9(±0.6)×10-5 Ωcm2. Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.",

author = "Oh, {Min Suk} and Jang, {Ja Soon} and Kim, {Sang Ho} and Seong, {Tae Yeon}",

year = "2006",

doi = "10.1002/pssc.200565201",

language = "English",

volume = "3",

pages = "1717--1720",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

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TY - JOUR

T1 - Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation

AU - Oh, Min Suk

AU - Jang, Ja Soon

AU - Kim, Sang Ho

AU - Seong, Tae Yeon

PY - 2006

Y1 - 2006

N2 - KrF excimer-laser-irradiation treatment in a N2 atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N 2 ambient become ohmic with specific contact resistance of 8.9(±0.6)×10-5 Ωcm2. Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.

AB - KrF excimer-laser-irradiation treatment in a N2 atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N 2 ambient become ohmic with specific contact resistance of 8.9(±0.6)×10-5 Ωcm2. Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.

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DO - 10.1002/pssc.200565201

M3 - Conference article

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EP - 1720

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation

Abstract

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