Abstract
KrF excimer-laser-irradiation treatment in a N2 atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N 2 ambient become ohmic with specific contact resistance of 8.9(±0.6)×10-5 Ωcm2. Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.
Original language | English |
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Pages (from-to) | 1717-1720 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 3 |
DOIs | |
Publication status | Published - 2006 |
Event | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2 |
ASJC Scopus subject areas
- Condensed Matter Physics