KrF excimer-laser-irradiation treatment in a N2 atmosphere is introduced to improve the electrical properties of p-type GaN and so to form low resistance nonalloyed Ni/Au ohmic contacts. The as-grown sample exhibits non-linear electrical behavior. However, the samples laser-annealed in N 2 ambient become ohmic with specific contact resistance of 8.9(±0.6)×10-5 Ωcm2. Hall measurement and current-voltage-temperature results show that the laser irradiation is effective in increasing a hole concentration in the surface region of p-GaN, leading to both the enhancement in field emission and the reduction of the effective Schottky barrier heights at the metal-semiconductor interface.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: 2005 Aug 28 → 2005 Sept 2
ASJC Scopus subject areas
- Condensed Matter Physics