Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes

Joon Woo Jeon; Seong Han Park; Se Yeon Jung; Sang Youl Lee; Jihyung Moon; June O. Song; Tae Yeon Seong

doi:10.1063/1.3484152

Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes

Joon Woo Jeon, Seong Han Park, Se Yeon Jung, Sang Youl Lee, Jihyung Moon, June O. Song, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al-Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al-Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al-Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1× 10^-4 cm², even after annealing at 250°C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.

Original language	English
Article number	092103
Journal	Applied Physics Letters
Volume	97
Issue number	9
DOIs	https://doi.org/10.1063/1.3484152
Publication status	Published - 2010 Aug 30

Bibliographical note

Funding Information:
This work was supported by the Manpower Development Program for Energy and Resources (Grant No. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation grant through World Class University Program (Grant No. R33-2008-000-10025-0) and the ERC Program (Grant No. 2009-0064868).

Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes",

abstract = "We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al-Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al-Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al-Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1× 10-4 cm2, even after annealing at 250°C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.",

author = "Jeon, {Joon Woo} and Park, {Seong Han} and Jung, {Se Yeon} and Lee, {Sang Youl} and Jihyung Moon and Song, {June O.} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Manpower Development Program for Energy and Resources (Grant No. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation grant through World Class University Program (Grant No. R33-2008-000-10025-0) and the ERC Program (Grant No. 2009-0064868). Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

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doi = "10.1063/1.3484152",

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AU - Jeon, Joon Woo

AU - Park, Seong Han

AU - Jung, Se Yeon

AU - Lee, Sang Youl

AU - Moon, Jihyung

AU - Song, June O.

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Manpower Development Program for Energy and Resources (Grant No. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation grant through World Class University Program (Grant No. R33-2008-000-10025-0) and the ERC Program (Grant No. 2009-0064868). Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/8/30

Y1 - 2010/8/30

N2 - We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al-Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al-Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al-Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1× 10-4 cm2, even after annealing at 250°C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.

AB - We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al-Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al-Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al-Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1× 10-4 cm2, even after annealing at 250°C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.

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Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes

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