Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang; Seong Ju Park; Tae Yeon Seong

doi:10.1116/1.591045

Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH₄)₂S_x]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10^-2 Ωcm². However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH₄)₂S_x (10 min), produces a specific contact resistance of 2.0(±3.5)× 10^-5 Ω cm². To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.

Original language	English
Pages (from-to)	2667-2670
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	17
Issue number	6
DOIs	https://doi.org/10.1116/1.591045
Publication status	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591045

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title = "Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment",

abstract = "Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.",

author = "Jang, {Ja Soon} and Park, {Seong Ju} and Seong, {Tae Yeon}",

year = "1999",

doi = "10.1116/1.591045",

language = "English",

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T1 - Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

AU - Jang, Ja Soon

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 1999

Y1 - 1999

N2 - Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.

AB - Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10-2 Ωcm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)× 10-5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current-voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.

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ER -

Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

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