Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET

Gwang Sik Kim; Seung Hwan Kim; June Park; Sun Woo Kim; Hyun Yong Yu

doi:10.1149/07204.0127ecst

Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET

Gwang Sik Kim, Seung Hwan Kim, June Park, Sun Woo Kim, Hyun Yong Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, the plasma oxidation process is introduced into the metal-interlayer-semiconductor (M-I-S) structure to reduce the contact resistance of the metal/n-type germanium (n-Ge) contact. The GeO_x layer formed by the plasma oxidation process acts as a good passivation layer between TiO₂ and Ge, and also an additional metal induced gap states (MIGS) blocking layer. From these effects of the GeOx layer, the M-I-S structure with multilayered interlayer stack, TiO₂/GeO_x, shows approximately four orders of magnitude of the reverse current density improvement from the M-S contact. This technique can be a solution of the severe Fermi-level pinning (FLP) and the high contact resistance in source/drain (S/D) regions of the n-channel germanium field-effect transistor (FET).

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
Editors	F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. De Gendt
Publisher	Electrochemical Society Inc.
Pages	127-129
Number of pages	3
Edition	4
ISBN (Electronic)	9781607687146
DOIs	https://doi.org/10.1149/07204.0127ecst
Publication status	Published - 2016
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States Duration: 2016 May 29 → 2016 Jun 2

Publication series

Name	ECS Transactions
Number	4
Volume	72
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Country/Territory	United States
City	San Diego
Period	16/5/29 → 16/6/2

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (Grant 2014R1A1A1036090), the Technology Innovation Program (10048594, Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI Korea).

Publisher Copyright:
©The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/07204.0127ecst

Cite this

Kim, G. S., Kim, S. H., Park, J., Kim, S. W., & Yu, H. Y. (2016). Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. De Gendt (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., pp. 127-129). (ECS Transactions; Vol. 72, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0127ecst

Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET. / Kim, Gwang Sik; Kim, Seung Hwan; Park, June et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. ed. / F. Roozeboom; V. Narayanan; K. Kakushima; P. J. Timans; E. P. Gusev; Z. Karim; S. De Gendt. 4. ed. Electrochemical Society Inc., 2016. p. 127-129 (ECS Transactions; Vol. 72, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, GS, Kim, SH, Park, J, Kim, SW & Yu, HY 2016, Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET. in F Roozeboom, V Narayanan, K Kakushima, PJ Timans, EP Gusev, Z Karim & S De Gendt (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 edn, ECS Transactions, no. 4, vol. 72, Electrochemical Society Inc., pp. 127-129, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting, San Diego, United States, 16/5/29. https://doi.org/10.1149/07204.0127ecst

Kim GS, Kim SH, Park J, Kim SW, Yu HY. Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET. In Roozeboom F, Narayanan V, Kakushima K, Timans PJ, Gusev EP, Karim Z, De Gendt S, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 ed. Electrochemical Society Inc. 2016. p. 127-129. (ECS Transactions; 4). doi: 10.1149/07204.0127ecst

Kim, Gwang Sik ; Kim, Seung Hwan ; Park, June et al. / Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. editor / F. Roozeboom ; V. Narayanan ; K. Kakushima ; P. J. Timans ; E. P. Gusev ; Z. Karim ; S. De Gendt. 4. ed. Electrochemical Society Inc., 2016. pp. 127-129 (ECS Transactions; 4).

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abstract = "In this work, the plasma oxidation process is introduced into the metal-interlayer-semiconductor (M-I-S) structure to reduce the contact resistance of the metal/n-type germanium (n-Ge) contact. The GeOx layer formed by the plasma oxidation process acts as a good passivation layer between TiO2 and Ge, and also an additional metal induced gap states (MIGS) blocking layer. From these effects of the GeOx layer, the M-I-S structure with multilayered interlayer stack, TiO2/GeOx, shows approximately four orders of magnitude of the reverse current density improvement from the M-S contact. This technique can be a solution of the severe Fermi-level pinning (FLP) and the high contact resistance in source/drain (S/D) regions of the n-channel germanium field-effect transistor (FET).",

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note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (Grant 2014R1A1A1036090), the Technology Innovation Program (10048594, Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI Korea). Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",

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N2 - In this work, the plasma oxidation process is introduced into the metal-interlayer-semiconductor (M-I-S) structure to reduce the contact resistance of the metal/n-type germanium (n-Ge) contact. The GeOx layer formed by the plasma oxidation process acts as a good passivation layer between TiO2 and Ge, and also an additional metal induced gap states (MIGS) blocking layer. From these effects of the GeOx layer, the M-I-S structure with multilayered interlayer stack, TiO2/GeOx, shows approximately four orders of magnitude of the reverse current density improvement from the M-S contact. This technique can be a solution of the severe Fermi-level pinning (FLP) and the high contact resistance in source/drain (S/D) regions of the n-channel germanium field-effect transistor (FET).

AB - In this work, the plasma oxidation process is introduced into the metal-interlayer-semiconductor (M-I-S) structure to reduce the contact resistance of the metal/n-type germanium (n-Ge) contact. The GeOx layer formed by the plasma oxidation process acts as a good passivation layer between TiO2 and Ge, and also an additional metal induced gap states (MIGS) blocking layer. From these effects of the GeOx layer, the M-I-S structure with multilayered interlayer stack, TiO2/GeOx, shows approximately four orders of magnitude of the reverse current density improvement from the M-S contact. This technique can be a solution of the severe Fermi-level pinning (FLP) and the high contact resistance in source/drain (S/D) regions of the n-channel germanium field-effect transistor (FET).

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Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET

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