Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn; Jungmin Moon; Yujin Seo; Tae In Lee; Choong Ki Kim; Wan Sik Hwang; Hyun Yong Yu; Byung Jin Cho

doi:10.1109/TED.2017.2694456

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn
, Jungmin Moon
, Yujin Seo
, Tae In Lee
, Choong Ki Kim
, Wan Sik Hwang
, Hyun Yong Yu
, Byung Jin Cho^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealingprocess;theNi filmwith lowresistivity (34μΩ.cm) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (pc) values of 9.01 μΩ cm2 for an NiGe/n+Ge contact and 3.61 μΩ cm2 for an NiGe/p+Ge NiGe/p⁺Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

Original language	English
Article number	7911180
Pages (from-to)	2599-2603
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	6
DOIs	https://doi.org/10.1109/TED.2017.2694456
Publication status	Published - 2017 Jun

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Atomic layer deposition (ALD)
nickel germanide (NiGe)
sheet resistance
specific contact resistivity
transfer length method (TLM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2017.2694456

Cite this

@article{3838602b08d641e581b7c946df9fcc03,

title = "Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film",

abstract = "Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealingprocess;theNi filmwith lowresistivity (34μΩ.cm) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (pc) values of 9.01 μΩ cm2 for an NiGe/n+Ge contact and 3.61 μΩ cm2 for an NiGe/p+Ge NiGe/p+Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.",

keywords = "Atomic layer deposition (ALD), nickel germanide (NiGe), sheet resistance, specific contact resistivity, transfer length method (TLM)",

author = "Ahn, \{Hyun Jun\} and Jungmin Moon and Yujin Seo and Lee, \{Tae In\} and Kim, \{Choong Ki\} and Hwang, \{Wan Sik\} and Yu, \{Hyun Yong\} and Cho, \{Byung Jin\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = jun,

doi = "10.1109/TED.2017.2694456",

language = "English",

volume = "64",

pages = "2599--2603",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

AU - Ahn, Hyun Jun

AU - Moon, Jungmin

AU - Seo, Yujin

AU - Lee, Tae In

AU - Kim, Choong Ki

AU - Hwang, Wan Sik

AU - Yu, Hyun Yong

AU - Cho, Byung Jin

PY - 2017/6

Y1 - 2017/6

N2 - Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealingprocess;theNi filmwith lowresistivity (34μΩ.cm) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (pc) values of 9.01 μΩ cm2 for an NiGe/n+Ge contact and 3.61 μΩ cm2 for an NiGe/p+Ge NiGe/p+Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

AB - Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealingprocess;theNi filmwith lowresistivity (34μΩ.cm) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (pc) values of 9.01 μΩ cm2 for an NiGe/n+Ge contact and 3.61 μΩ cm2 for an NiGe/p+Ge NiGe/p+Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.

KW - Atomic layer deposition (ALD)

KW - nickel germanide (NiGe)

KW - sheet resistance

KW - specific contact resistivity

KW - transfer length method (TLM)

UR - https://www.scopus.com/pages/publications/85018956901

U2 - 10.1109/TED.2017.2694456

DO - 10.1109/TED.2017.2694456

M3 - Article

AN - SCOPUS:85018956901

SN - 0018-9383

VL - 64

SP - 2599

EP - 2603

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 7911180

ER -

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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