Formation of Sb-doped SnO2p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer

Hyun Gi Hong, June O. Song, Hyunseok Na, Hyunsoo Kim, Kyoung Kook Kim, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


A Cu-doped In2 O3 (CIO) interlayer was introduced to enhance the electrical and optical properties of Sb-doped SnO2 (ATO) p-type electrodes grown by pulsed laser deposition. CIO (2.5 nm) /ATO (250 nm) contacts become ohmic with specific contact resistance of 2.1× 10-3 cm2 and give transmittance of ∼81% at 400 nm, when annealed at 630°C for 1 min in air. Near-UV (400 nm) GaN -based light-emitting diodes (LEDs) fabricated with the CIO/ATO p-electrodes give forward-bias voltage of 3.91 V at injection current of 20 mA and show much higher output power compared to LEDs with conventional NiAu p-electrodes.

Original languageEnglish
Pages (from-to)254-256
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number9
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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