Formation of Sb-doped SnO2p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer

Hyun Gi Hong; June O. Song; Hyunseok Na; Hyunsoo Kim; Kyoung Kook Kim; Tae Yeon Seong

doi:10.1149/1.2748636

Formation of Sb-doped SnO₂p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer

Hyun Gi Hong, June O. Song, Hyunseok Na, Hyunsoo Kim, Kyoung Kook Kim, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A Cu-doped In2 O3 (CIO) interlayer was introduced to enhance the electrical and optical properties of Sb-doped SnO2 (ATO) p-type electrodes grown by pulsed laser deposition. CIO (2.5 nm) /ATO (250 nm) contacts become ohmic with specific contact resistance of 2.1× 10-3 cm2 and give transmittance of ∼81% at 400 nm, when annealed at 630°C for 1 min in air. Near-UV (400 nm) GaN -based light-emitting diodes (LEDs) fabricated with the CIO/ATO p-electrodes give forward-bias voltage of 3.91 V at injection current of 20 mA and show much higher output power compared to LEDs with conventional NiAu p-electrodes.

Original language	English
Pages (from-to)	254-256
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2748636
Publication status	Published - 2007 Jan 1

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Formation of Sb-doped SnO2p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer",

abstract = "A Cu-doped In2 O3 (CIO) interlayer was introduced to enhance the electrical and optical properties of Sb-doped SnO2 (ATO) p-type electrodes grown by pulsed laser deposition. CIO (2.5 nm) /ATO (250 nm) contacts become ohmic with specific contact resistance of 2.1× 10-3 cm2 and give transmittance of ∼81% at 400 nm, when annealed at 630°C for 1 min in air. Near-UV (400 nm) GaN -based light-emitting diodes (LEDs) fabricated with the CIO/ATO p-electrodes give forward-bias voltage of 3.91 V at injection current of 20 mA and show much higher output power compared to LEDs with conventional NiAu p-electrodes.",

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T1 - Formation of Sb-doped SnO2p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer

AU - Hong, Hyun Gi

AU - Song, June O.

AU - Na, Hyunseok

AU - Kim, Hyunsoo

AU - Kim, Kyoung Kook

AU - Seong, Tae Yeon

PY - 2007/1/1

Y1 - 2007/1/1

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AB - A Cu-doped In2 O3 (CIO) interlayer was introduced to enhance the electrical and optical properties of Sb-doped SnO2 (ATO) p-type electrodes grown by pulsed laser deposition. CIO (2.5 nm) /ATO (250 nm) contacts become ohmic with specific contact resistance of 2.1× 10-3 cm2 and give transmittance of ∼81% at 400 nm, when annealed at 630°C for 1 min in air. Near-UV (400 nm) GaN -based light-emitting diodes (LEDs) fabricated with the CIO/ATO p-electrodes give forward-bias voltage of 3.91 V at injection current of 20 mA and show much higher output power compared to LEDs with conventional NiAu p-electrodes.

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Formation of Sb-doped SnO₂p-type ohmic contact for near-UV GaN -based LEDs by a CIO interlayer

Abstract

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