Abstract
Short-period GaAs quantum wire (QWR) array was grown by metalorganic chemical vapor deposition (MOCVD) on submicron gratings. And a new lithography technique to fabricate submicron current-blocking layer on the short-period QWR array without any external masks was developed. The methods include the followings. The photoresist was coated on the nonplanar top of the laser diode structure. The photoresist stripes were designed to remain over each QWR with a flood exposure and a develop technique. The GaAs contact layers on the parts of the (III)A and all the (100) top quantum wells (QWs) were removed by employing the photoresist remaining on the top valley as masks. The submicron current-blocking layer was produced all over the regions except QWR's, by sputtering SiO2 film followed by lift-off and metal evaporation. It must help a majority of current pass into QWR active region.
Original language | English |
---|---|
Pages (from-to) | 63-67 |
Number of pages | 5 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 2723 |
DOIs | |
Publication status | Published - 1996 |
Event | Electron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI - Santa Clara, CA, United States Duration: 1996 Mar 11 → 1996 Mar 13 |
Keywords
- Lithography technique
- Metalorganic chemical vapor deposition
- Short-period quantum wire array
- Submicron current-blocking layer
- Submicron gratings
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering