Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

Young Woo Ok; Chel Jong Choi; Jeong Tae Maeng; Tae Yeon Seong

doi:10.1007/s11664-004-0221-8

Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

Young Woo Ok, Chel Jong Choi, Jeong Tae Maeng, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of argon plasma treatment on the structural and electrical properties of Ni suicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the suicide films.

Original language	English
Pages (from-to)	916-922
Number of pages	7
Journal	Journal of Electronic Materials
Volume	33
Issue number	8
DOIs	https://doi.org/10.1007/s11664-004-0221-8
Publication status	Published - 2004 Aug
Externally published	Yes

Keywords

Argon plasma
Ni native oxide
Ni-silicides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1007/s11664-004-0221-8

Cite this

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title = "Formation of thermally stable Ni monosilicide using an inductively coupled plasma process",

abstract = "The effect of argon plasma treatment on the structural and electrical properties of Ni suicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the suicide films.",

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author = "Ok, {Young Woo} and Choi, {Chel Jong} and Maeng, {Jeong Tae} and Seong, {Tae Yeon}",

year = "2004",

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doi = "10.1007/s11664-004-0221-8",

language = "English",

volume = "33",

pages = "916--922",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

AU - Ok, Young Woo

AU - Choi, Chel Jong

AU - Maeng, Jeong Tae

AU - Seong, Tae Yeon

PY - 2004/8

Y1 - 2004/8

N2 - The effect of argon plasma treatment on the structural and electrical properties of Ni suicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the suicide films.

AB - The effect of argon plasma treatment on the structural and electrical properties of Ni suicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the suicide films.

KW - Argon plasma

KW - Ni native oxide

KW - Ni-silicides

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JF - Journal of Electronic Materials

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Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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