Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Joong Yeon Cho; Kyeong Jae Byeon; Hyoungwon Park; Hyeong Seok Kim; Heon Lee

doi:10.1143/JJAP.49.102103

Formation of TiO₂ nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Joong Yeon Cho, Kyeong Jae Byeon, Hyoungwon Park, Hyeong Seok Kim, Heon Lee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A TiO₂ nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO₂ nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO₂ nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO₂ nano-structure. No electrical degradation was observed for the patterned LED device.

Original language	English
Pages (from-to)	1021031-1021034
Number of pages	4
Journal	Japanese journal of applied physics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.49.102103
Publication status	Published - 2010 Oct

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.49.102103

Cite this

@article{f7c94501bc2b409d833ad5ff3646f35a,

title = "Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency",

abstract = "A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.",

author = "Cho, {Joong Yeon} and Byeon, {Kyeong Jae} and Hyoungwon Park and Kim, {Hyeong Seok} and Heon Lee",

year = "2010",

month = oct,

doi = "10.1143/JJAP.49.102103",

language = "English",

volume = "49",

pages = "1021031--1021034",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency

AU - Cho, Joong Yeon

AU - Byeon, Kyeong Jae

AU - Park, Hyoungwon

AU - Kim, Hyeong Seok

AU - Lee, Heon

PY - 2010/10

Y1 - 2010/10

N2 - A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.

AB - A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.

UR - http://www.scopus.com/inward/record.url?scp=78650147830&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.102103

DO - 10.1143/JJAP.49.102103

M3 - Article

AN - SCOPUS:78650147830

SN - 0021-4922

VL - 49

SP - 1021031

EP - 1021034

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 10

ER -

Formation of TiO₂ nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this