Formation of TiO2 nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Joong Yeon Cho; Kyeong Jae Byeon; Hyoungwon Park; Hyeong Seok Kim; Heon Lee

doi:10.1143/JJAP.49.102103

Formation of TiO₂ nano pattern on GaN-based light-emitting diodes for light extraction efficiency

Joong Yeon Cho, Kyeong Jae Byeon, Hyoungwon Park, Hyeong Seok Kim, Heon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A TiO₂ nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO₂ nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO₂ nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO₂ nano-structure. No electrical degradation was observed for the patterned LED device.

Original language	English
Pages (from-to)	1021031-1021034
Number of pages	4
Journal	Japanese journal of applied physics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.49.102103
Publication status	Published - 2010 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.",

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AU - Byeon, Kyeong Jae

AU - Park, Hyoungwon

AU - Kim, Hyeong Seok

AU - Lee, Heon

PY - 2010/10

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N2 - A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.

AB - A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.

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Formation of TiO₂ nano pattern on GaN-based light-emitting diodes for light extraction efficiency

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