Formation of vanadium-based ohmic contacts to n-GaN

June O. Song; Sang Ho Kim; Joon Seop Kwak; Tae Yeon Seong

doi:10.1063/1.1598284

Formation of vanadium-based ohmic contacts to n-GaN

June O. Song^*
, Sang Ho Kim
, Joon Seop Kwak
, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 ^-3-10^-4 ωcm² upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

Original language	English
Pages (from-to)	1154-1156
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1598284
Publication status	Published - 2003 Aug 11
Externally published	Yes

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Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.",

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AB - A study was performed on the formation of vanadium-based ohmic contacts to n-GaN as a function of annealing temperature. It was found that the V (60 nm) contacts became ohmic with specific contact resistances of 10 -3-10-4 ωcm2 upon annealing at 650 and 850°C. Based on glancing-angle x-ray diffraction and Auger electron spectroscopy results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts were discussed.

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Formation of vanadium-based ohmic contacts to n-GaN

Abstract

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