Abstract
In this study, we demonstrate forming-free and reliable resistive switching (RS) characteristics by controlling the stoichiometry of niobium nitride (NbNx) films. Compared to a perfect stoichiometric NbNx film, a decrease of 6% nitrogen content and an increase of 5% O2 content are found in the sub-stoichiometric NbNx sample (s-NbNx), and a structural change for the s-NbNx film is observed from X-ray diffraction results, which results in the possibility of abundant defect generation in the s-NbNx film at virgin state. In the RS test, the s-NbNx film normally carries out well without initial forming because of the already-formed conducting filaments; in particular, in the reliability study, the s-NbNx film shows more stable dc cycling characteristics for 1000 cycles without any degradation and smaller variations in the operating current and voltage characteristics.
Original language | English |
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Pages (from-to) | 264-268 |
Number of pages | 5 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 9 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2015 Apr 1 |
Keywords
- Niobium nitrides
- Resistive random access memories
- Resistive switching
- Stoichiometry
- Thin films
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics