Forming-free SiN-based resistive switching memory prepared by RF sputtering

Hee Dong Kim, Ho Myoung An, Seok Man Hong, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under ±2 V/100 ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 109 cycles and long data retention over 105 s at 85 °C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method.

Original languageEnglish
Pages (from-to)1822-1827
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number9
Publication statusPublished - 2013 Sept


  • SiN
  • memory
  • resistive switching
  • sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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