Forming-free SiN-based resistive switching memory prepared by RF sputtering

Hee Dong Kim; Ho Myoung An; Seok Man Hong; Tae Geun Kim

doi:10.1002/pssa.201329021

Forming-free SiN-based resistive switching memory prepared by RF sputtering

Hee Dong Kim
, Ho Myoung An
, Seok Man Hong
, Tae Geun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under ±2 V/100 ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 10⁹ cycles and long data retention over 10⁵ s at 85 °C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method.

Original language	English
Pages (from-to)	1822-1827
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	9
DOIs	https://doi.org/10.1002/pssa.201329021
Publication status	Published - 2013 Sept

Keywords

PECVD
SiN
memory
resistive switching
sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201329021

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title = "Forming-free SiN-based resistive switching memory prepared by RF sputtering",

abstract = "A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under ±2 V/100 ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 109 cycles and long data retention over 105 s at 85 °C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method.",

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AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Hong, Seok Man

AU - Kim, Tae Geun

PY - 2013/9

Y1 - 2013/9

N2 - A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under ±2 V/100 ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 109 cycles and long data retention over 105 s at 85 °C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method.

AB - A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under ±2 V/100 ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 109 cycles and long data retention over 105 s at 85 °C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method.

KW - PECVD

KW - SiN

KW - memory

KW - resistive switching

KW - sputtering

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JF - Physica Status Solidi (A) Applications and Materials Science

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Forming-free SiN-based resistive switching memory prepared by RF sputtering

Abstract

Keywords

ASJC Scopus subject areas

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