Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Taehee Yoo, S. Khym, Sun Young Yea, Sunjae Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

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17 Citations (Scopus)


We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.

Original languageEnglish
Article number202505
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 2009

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687), by the Seoul R&DB Program (Grant No. ST090777), and by the National Science Foundation Grant No. DMR06-03762.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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