Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Taehee Yoo; S. Khym; Sun Young Yea; Sunjae Chung; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.3266826

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Taehee Yoo, S. Khym, Sun Young Yea, Sunjae Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.

Original language	English
Article number	202505
Journal	Applied Physics Letters
Volume	95
Issue number	20
DOIs	https://doi.org/10.1063/1.3266826
Publication status	Published - 2009

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687), by the Seoul R&DB Program (Grant No. ST090777), and by the National Science Foundation Grant No. DMR06-03762.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3266826

Cite this

@article{9e249837bbba42f3a2ac0a2de2161df8,

title = "Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices",

abstract = "We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.",

author = "Taehee Yoo and S. Khym and Yea, {Sun Young} and Sunjae Chung and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687), by the Seoul R&DB Program (Grant No. ST090777), and by the National Science Foundation Grant No. DMR06-03762.",

year = "2009",

doi = "10.1063/1.3266826",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

AU - Yoo, Taehee

AU - Khym, S.

AU - Yea, Sun Young

AU - Chung, Sunjae

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687), by the Seoul R&DB Program (Grant No. ST090777), and by the National Science Foundation Grant No. DMR06-03762.

PY - 2009

Y1 - 2009

N2 - We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.

AB - We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.

UR - http://www.scopus.com/inward/record.url?scp=70450253352&partnerID=8YFLogxK

U2 - 10.1063/1.3266826

DO - 10.1063/1.3266826

M3 - Article

AN - SCOPUS:70450253352

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202505

ER -

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this