Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

Sanghoon Lee; X. Liu; J. K. Furdyna

Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.

Original language	English
Title of host publication	Novel Materials and Devices for Spintronics
Pages	37-42
Number of pages	6
Publication status	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 2009 Apr 14 → 2009 Apr 17

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1183
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	09/4/14 → 09/4/17

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film",

abstract = "GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.",

author = "Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

year = "2009",

language = "English",

isbn = "9781605111568",

series = "Materials Research Society Symposium Proceedings",

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note = "2009 MRS Spring Meeting ; Conference date: 14-04-2009 Through 17-04-2009",

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T1 - Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2009

Y1 - 2009

N2 - GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.

AB - GaMnAs ferromagnetic semiconductor films under compressive strain are characterized by strong biaxial in-plane anisotropy, which generates four stable magnetization directions at zero magnetic field. This feature results in double switching behavior during magnetization reversal process measured by planar Hall resistance (PHR). Minor scans of the PHR exhibit staggered asymmetric loops due to the formation of stable muti-domain structures. We show that the resulting four stable PHR states can serve as quaternary logic states for a spin memory device.

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M3 - Conference contribution

AN - SCOPUS:77950995362

SN - 9781605111568

T3 - Materials Research Society Symposium Proceedings

SP - 37

EP - 42

BT - Novel Materials and Devices for Spintronics

T2 - 2009 MRS Spring Meeting

Y2 - 14 April 2009 through 17 April 2009

ER -

Four stable magnetization states formed in a single layer of GaMnAs ferromagnetic film

Abstract

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