Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sanghoon Lee; D. Y. Shin; X. Liu; J. K. Furdyna

doi:10.1109/NMDC.2006.4388851

Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sanghoon Lee, D. Y. Shin, X. Liu, J. K. Furdyna

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	234-235
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388851
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Anisotropy
Component
Ferromagnetic semiconductor
GaMnAs
Quaternary states

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388851

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Four states memory function in GaMnAs ferromagenic semiconductor epilayer. / Lee, Sanghoon; Shin, D. Y.; Liu, X. et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 234-235 4388851 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, S, Shin, DY, Liu, X & Furdyna, JK 2006, Four states memory function in GaMnAs ferromagenic semiconductor epilayer. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388851, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 234-235, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388851

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abstract = "GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.",

keywords = "Anisotropy, Component, Ferromagnetic semiconductor, GaMnAs, Quaternary states",

author = "Sanghoon Lee and Shin, {D. Y.} and X. Liu and Furdyna, {J. K.}",

year = "2006",

doi = "10.1109/NMDC.2006.4388851",

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series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

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AU - Lee, Sanghoon

AU - Shin, D. Y.

AU - Liu, X.

AU - Furdyna, J. K.

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Y1 - 2006

N2 - GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

AB - GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

KW - Anisotropy

KW - Component

KW - Ferromagnetic semiconductor

KW - GaMnAs

KW - Quaternary states

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DO - 10.1109/NMDC.2006.4388851

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SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 234

EP - 235

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Abstract

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Keywords

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