Fractional quantum Hall effect in hole Landau levels

S. R.Eric Yang; A. H. MacDonald; D. Yoshioka

doi:10.1103/PhysRevB.41.1290

Fractional quantum Hall effect in hole Landau levels

S. R.Eric Yang, A. H. MacDonald, D. Yoshioka

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The fractional quantum hole effect for a hole gas in GaAs/AlxGa1-xAs heterostructures with strong heavy- and light-hole mixing is studied by combining a theory of the effective hole-hole interaction with finite-size exact diagonalization studies. We have investigated the dependence of the excitation gap at (1/3 filling on the amount of heavy- and light-hole mixing. The mixing can be controlled by applying uniaxial stress. Our results suggest a novel experiment to observe a transition between incompressible and gapless states.

Original language	English
Pages (from-to)	1290-1293
Number of pages	4
Journal	Physical Review B
Volume	41
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.41.1290
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.41.1290

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title = "Fractional quantum Hall effect in hole Landau levels",

abstract = "The fractional quantum hole effect for a hole gas in GaAs/AlxGa1-xAs heterostructures with strong heavy- and light-hole mixing is studied by combining a theory of the effective hole-hole interaction with finite-size exact diagonalization studies. We have investigated the dependence of the excitation gap at (1/3 filling on the amount of heavy- and light-hole mixing. The mixing can be controlled by applying uniaxial stress. Our results suggest a novel experiment to observe a transition between incompressible and gapless states.",

author = "Yang, {S. R.Eric} and MacDonald, {A. H.} and D. Yoshioka",

year = "1990",

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AU - Yang, S. R.Eric

AU - MacDonald, A. H.

AU - Yoshioka, D.

PY - 1990

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AB - The fractional quantum hole effect for a hole gas in GaAs/AlxGa1-xAs heterostructures with strong heavy- and light-hole mixing is studied by combining a theory of the effective hole-hole interaction with finite-size exact diagonalization studies. We have investigated the dependence of the excitation gap at (1/3 filling on the amount of heavy- and light-hole mixing. The mixing can be controlled by applying uniaxial stress. Our results suggest a novel experiment to observe a transition between incompressible and gapless states.

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Fractional quantum Hall effect in hole Landau levels

Abstract

ASJC Scopus subject areas

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