The fractional quantum hole effect for a hole gas in GaAs/AlxGa1-xAs heterostructures with strong heavy- and light-hole mixing is studied by combining a theory of the effective hole-hole interaction with finite-size exact diagonalization studies. We have investigated the dependence of the excitation gap at (1/3 filling on the amount of heavy- and light-hole mixing. The mixing can be controlled by applying uniaxial stress. Our results suggest a novel experiment to observe a transition between incompressible and gapless states.
|Number of pages||4|
|Journal||Physical Review B|
|Publication status||Published - 1990|
ASJC Scopus subject areas
- Condensed Matter Physics