Amorphous oxide semiconductors (AOSs) have already been adopted as a channel layer in the display industry and have recently expanded their scope. A study to improve the properties of these AOSs is being conducted extensively. The electrical characteristics are improved by applying a metal capping (MC) layer structure to amorphous Si–Zn–Sn–O (a-SZTO). The characteristics of the MC layer structure systematically improved according to its length. The high mobility of 76.69 cm2/Vs is shown in the MC layer with 40 µm length. It was confirmed that the MC layer structure operates stably even at a current level that is one order higher (≈10–3 A) than the conventional structure (≈10–4 A) in the gate pulse switching characteristics. Mainly because the MC layer structure is less affected by the injected electrons and the interface trap density between the channel and the gate insulator. If the MC layer is applied, it is expected to operate in a high-frequency region while maintaining a high current level.
|Number of pages
|Transactions on Electrical and Electronic Materials
|Published - 2023 Aug
Bibliographical notePublisher Copyright:
© 2023, The Korean Institute of Electrical and Electronic Material Engineers.
- Amorphous oxide semiconductor
- Carrier injection
- Metal capping layer
- Thin-film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering