Frequency Response Characteristics Depending on the Metal Capping Structure and Length of the Amorphous SiZnSnO Thin Film Transistor

Ji Ye Lee, Byeong Kwon Ju, Sang Yeol Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Amorphous oxide semiconductors (AOSs) have already been adopted as a channel layer in the display industry and have recently expanded their scope. A study to improve the properties of these AOSs is being conducted extensively. The electrical characteristics are improved by applying a metal capping (MC) layer structure to amorphous Si–Zn–Sn–O (a-SZTO). The characteristics of the MC layer structure systematically improved according to its length. The high mobility of 76.69 cm2/Vs is shown in the MC layer with 40 µm length. It was confirmed that the MC layer structure operates stably even at a current level that is one order higher (≈10–3 A) than the conventional structure (≈10–4 A) in the gate pulse switching characteristics. Mainly because the MC layer structure is less affected by the injected electrons and the interface trap density between the channel and the gate insulator. If the MC layer is applied, it is expected to operate in a high-frequency region while maintaining a high current level.

Original languageEnglish
Pages (from-to)279-284
Number of pages6
JournalTransactions on Electrical and Electronic Materials
Volume24
Issue number4
DOIs
Publication statusPublished - 2023 Aug

Bibliographical note

Publisher Copyright:
© 2023, The Korean Institute of Electrical and Electronic Material Engineers.

Keywords

  • Amorphous oxide semiconductor
  • Carrier injection
  • Frequency
  • Metal capping layer
  • Thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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