Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park; Tae Soo Kim; Chel Jong Choi; Tae Yeon Seong; Seong Ju Park

Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park, Tae Soo Kim, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journal › Conference article › peer-review

Abstract

Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10^-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Original language	English
Pages (from-to)	F1361-F1366
Journal	Materials Research Society Symposium - Proceedings
Volume	638
Publication status	Published - 2001
Externally published	Yes
Event	Microcrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States Duration: 2000 Nov 27 → 2000 Nov 30

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{b8248ac68976420db19316997c20f801,

title = "Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride",

abstract = "Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.",

author = "Park, {Nae Man} and Kim, {Tae Soo} and Choi, {Chel Jong} and Seong, {Tae Yeon} and Park, {Seong Ju}",

year = "2001",

language = "English",

volume = "638",

pages = "F1361--F1366",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Microcrystalline and Nanocrystalline Semiconductors 2000 ; Conference date: 27-11-2000 Through 30-11-2000",

}

TY - JOUR

T1 - Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

AU - Park, Nae Man

AU - Kim, Tae Soo

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Park, Seong Ju

PY - 2001

Y1 - 2001

N2 - Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

AB - Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

UR - http://www.scopus.com/inward/record.url?scp=0035557478&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035557478

SN - 0272-9172

VL - 638

SP - F1361-F1366

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Microcrystalline and Nanocrystalline Semiconductors 2000

Y2 - 27 November 2000 through 30 November 2000

ER -

Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Abstract

ASJC Scopus subject areas

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