Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Minju Shin; Ming Shi; Mireille Mouis; Antoine Cros; Emmanuel Josse; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1016/j.sse.2014.04.039

Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Minju Shin, Ming Shi, Mireille Mouis, Antoine Cros, Emmanuel Josse, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The feasibility of full split C-V method in ultra-thin body and BOX (UTBB) FDSOI devices is demonstrated, emphasizing the usefulness of gate-to-bulk capacitance. The split C-V measurements carried out on both gate-to-channel and gate-to-bulk mode are shown to be consistent with TCAD simulation. This enabled us to propose an improved parameter extraction methodology for the whole vertical FDSOI stack from gate to substrate using back biasing effect.

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Solid-State Electronics
Volume	99
DOIs	https://doi.org/10.1016/j.sse.2014.04.039
Publication status	Published - 2014 Sept

Keywords

MOS
SOI
Split CV
UTBB

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2014.04.039

Cite this

@article{9dfc5f13e6c34fbf8df0a786c4b2926f,

title = "Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices",

abstract = "The feasibility of full split C-V method in ultra-thin body and BOX (UTBB) FDSOI devices is demonstrated, emphasizing the usefulness of gate-to-bulk capacitance. The split C-V measurements carried out on both gate-to-channel and gate-to-bulk mode are shown to be consistent with TCAD simulation. This enabled us to propose an improved parameter extraction methodology for the whole vertical FDSOI stack from gate to substrate using back biasing effect.",

keywords = "MOS, SOI, Split CV, UTBB",

author = "Minju Shin and Ming Shi and Mireille Mouis and Antoine Cros and Emmanuel Josse and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

year = "2014",

month = sep,

doi = "10.1016/j.sse.2014.04.039",

language = "English",

volume = "99",

pages = "104--107",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices

AU - Shin, Minju

AU - Shi, Ming

AU - Mouis, Mireille

AU - Cros, Antoine

AU - Josse, Emmanuel

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014/9

Y1 - 2014/9

N2 - The feasibility of full split C-V method in ultra-thin body and BOX (UTBB) FDSOI devices is demonstrated, emphasizing the usefulness of gate-to-bulk capacitance. The split C-V measurements carried out on both gate-to-channel and gate-to-bulk mode are shown to be consistent with TCAD simulation. This enabled us to propose an improved parameter extraction methodology for the whole vertical FDSOI stack from gate to substrate using back biasing effect.

AB - The feasibility of full split C-V method in ultra-thin body and BOX (UTBB) FDSOI devices is demonstrated, emphasizing the usefulness of gate-to-bulk capacitance. The split C-V measurements carried out on both gate-to-channel and gate-to-bulk mode are shown to be consistent with TCAD simulation. This enabled us to propose an improved parameter extraction methodology for the whole vertical FDSOI stack from gate to substrate using back biasing effect.

KW - MOS

KW - SOI

KW - Split CV

KW - UTBB

UR - http://www.scopus.com/inward/record.url?scp=84904645572&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2014.04.039

DO - 10.1016/j.sse.2014.04.039

M3 - Article

AN - SCOPUS:84904645572

SN - 0038-1101

VL - 99

SP - 104

EP - 107

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Abstract

Keywords

ASJC Scopus subject areas

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