Fully Ion-Implanted InP JFET with Buried p-Layer

Sung J. Kim, Jichai Jeong, G. P. Vella-Coleiro, P. R. Smith

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


A buried p-layer has been successfully implemented in a fully ion implanted InP JFET for the first time. Using Be co-implanted with Si, a sharp channel profile is obtained. The saturation current has been reduced and the pinch-off characteristic has been improved with a slight decrease in transconductance and cutoff frequency. The equivalent circuits for the JFET with and without the buried p-layer are compared.

Original languageEnglish
Pages (from-to)57-58
Number of pages2
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 1990 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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