Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors

Kui Feng; Wentao Shan; Suxiang Ma; Ziang Wu; Jianhua Chen; Han Guo; Bin Liu; Junwei Wang; Bangbang Li; Han Young Woo; Simone Fabiano; Wei Huang; Xugang Guo

doi:10.1002/anie.202109281

Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors

Kui Feng
, Wentao Shan
, Suxiang Ma
, Ziang Wu
, Jianhua Chen^*
, Han Guo
, Bin Liu
, Junwei Wang
, Bangbang Li
, Han Young Woo^*
, Simone Fabiano^*
, Wei Huang
, Xugang Guo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

108 Citations (Scopus)

Abstract

The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μ_e) of up to ≈10⁻² cm² V⁻¹ s⁻¹ and volumetric capacitance (C*) as high as 443 F cm⁻³, simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm⁻¹ and a maximum μC* product of 15.2 F cm⁻¹ V⁻¹ s⁻¹. The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.

Original language	English
Pages (from-to)	24198-24205
Number of pages	8
Journal	Angewandte Chemie - International Edition
Volume	60
Issue number	45
DOIs	https://doi.org/10.1002/anie.202109281
Publication status	Published - 2021 Nov 2

Bibliographical note

Funding Information:
K.F. acknowledges the financial support by the National Natural Science Foundation of China (22005135), the Guangdong Basic and Applied Basic Research Foundation (2021A1515011640), and the Shenzhen Basic Research Fund (no. JCYJ20190809162003662). X.G. is thankful for the financial support from the National Natural Science Foundation of China (21774055) and the Shenzhen Basic Research Fund (JCYJ20180504165709042). We also acknowledge the support of Guangdong Provincial Key Laboratory Program (2021B1212040001) from the Department of Science and Technology of Guangdong Province. H.Y.W. acknowledges a financial support from the National Research Foundation (NRF) of Korea (2019R1A2C2085290, 2019R1A6A1A11044070). S.F. acknowledges financial support from the Swedish Research Council (2020‐03243) and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO‐Mat‐LiU 2009‐00971).

Publisher Copyright:
© 2021 Wiley-VCH GmbH

Keywords

electron mobility
fused bithiophene imide dimer
n-type polymer semiconductors
organic electrochemical transistors
organic electronics

ASJC Scopus subject areas

Catalysis
General Chemistry

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10.1002/anie.202109281

Cite this

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title = "Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors",

abstract = "The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe) of up to ≈10−2 cm2 V−1 s−1 and volumetric capacitance (C*) as high as 443 F cm−3, simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm−1 and a maximum μC* product of 15.2 F cm−1 V−1 s−1. The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.",

keywords = "electron mobility, fused bithiophene imide dimer, n-type polymer semiconductors, organic electrochemical transistors, organic electronics",

author = "Kui Feng and Wentao Shan and Suxiang Ma and Ziang Wu and Jianhua Chen and Han Guo and Bin Liu and Junwei Wang and Bangbang Li and Woo, \{Han Young\} and Simone Fabiano and Wei Huang and Xugang Guo",

note = "Funding Information: K.F. acknowledges the financial support by the National Natural Science Foundation of China (22005135), the Guangdong Basic and Applied Basic Research Foundation (2021A1515011640), and the Shenzhen Basic Research Fund (no. JCYJ20190809162003662). X.G. is thankful for the financial support from the National Natural Science Foundation of China (21774055) and the Shenzhen Basic Research Fund (JCYJ20180504165709042). We also acknowledge the support of Guangdong Provincial Key Laboratory Program (2021B1212040001) from the Department of Science and Technology of Guangdong Province. H.Y.W. acknowledges a financial support from the National Research Foundation (NRF) of Korea (2019R1A2C2085290, 2019R1A6A1A11044070). S.F. acknowledges financial support from the Swedish Research Council (2020‐03243) and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Link{\"o}ping University (Faculty Grant SFO‐Mat‐LiU 2009‐00971). Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

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doi = "10.1002/anie.202109281",

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T1 - Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors

AU - Feng, Kui

AU - Shan, Wentao

AU - Ma, Suxiang

AU - Wu, Ziang

AU - Chen, Jianhua

AU - Guo, Han

AU - Liu, Bin

AU - Wang, Junwei

AU - Li, Bangbang

AU - Woo, Han Young

AU - Fabiano, Simone

AU - Huang, Wei

AU - Guo, Xugang

N1 - Funding Information: K.F. acknowledges the financial support by the National Natural Science Foundation of China (22005135), the Guangdong Basic and Applied Basic Research Foundation (2021A1515011640), and the Shenzhen Basic Research Fund (no. JCYJ20190809162003662). X.G. is thankful for the financial support from the National Natural Science Foundation of China (21774055) and the Shenzhen Basic Research Fund (JCYJ20180504165709042). We also acknowledge the support of Guangdong Provincial Key Laboratory Program (2021B1212040001) from the Department of Science and Technology of Guangdong Province. H.Y.W. acknowledges a financial support from the National Research Foundation (NRF) of Korea (2019R1A2C2085290, 2019R1A6A1A11044070). S.F. acknowledges financial support from the Swedish Research Council (2020‐03243) and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO‐Mat‐LiU 2009‐00971). Publisher Copyright: © 2021 Wiley-VCH GmbH

PY - 2021/11/2

Y1 - 2021/11/2

N2 - The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe) of up to ≈10−2 cm2 V−1 s−1 and volumetric capacitance (C*) as high as 443 F cm−3, simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm−1 and a maximum μC* product of 15.2 F cm−1 V−1 s−1. The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.

AB - The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe) of up to ≈10−2 cm2 V−1 s−1 and volumetric capacitance (C*) as high as 443 F cm−3, simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm−1 and a maximum μC* product of 15.2 F cm−1 V−1 s−1. The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.

KW - electron mobility

KW - fused bithiophene imide dimer

KW - n-type polymer semiconductors

KW - organic electrochemical transistors

KW - organic electronics

UR - https://www.scopus.com/pages/publications/85116443879

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DO - 10.1002/anie.202109281

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SN - 1433-7851

VL - 60

SP - 24198

EP - 24205

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 45

ER -

Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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