Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO

Sang Won Yoon; Jong Hyun Seo; Tae Yeon Seong; Tae Hwan Yu; Yil Hwan You; Kon Bae Lee; Hoon Kwon; Jae Pyoung Ahn

doi:10.1021/cg2010908

Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO

Sang Won Yoon, Jong Hyun Seo, Tae Yeon Seong, Tae Hwan Yu, Yil Hwan You, Kon Bae Lee, Hoon Kwon, Jae Pyoung Ahn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.

Original language	English
Pages (from-to)	1167-1172
Number of pages	6
Journal	Crystal Growth and Design
Volume	12
Issue number	3
DOIs	https://doi.org/10.1021/cg2010908
Publication status	Published - 2012 Mar 7

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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abstract = "We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.",

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T1 - Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO

AU - Yoon, Sang Won

AU - Seo, Jong Hyun

AU - Seong, Tae Yeon

AU - Yu, Tae Hwan

AU - You, Yil Hwan

AU - Lee, Kon Bae

AU - Kwon, Hoon

AU - Ahn, Jae Pyoung

PY - 2012/3/7

Y1 - 2012/3/7

N2 - We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.

AB - We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC ≈ 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin.

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Ga ordering and electrical conductivity in nanotwin and superlattice-structured Ga-doped ZnO

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