GaAs Mesfet Amplifiers Fabricated on InP Substrates

Jichai Jeong, G. P. Vella-Coleiro, C. M.L. Yee

Research output: Contribution to journalArticlepeer-review


Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers.

Original languageEnglish
Pages (from-to)135-136
Number of pages2
JournalElectronics Letters
Issue number2
Publication statusPublished - 1990 Jan


  • Amplifiers
  • Field effect devices
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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