GaAs Mesfet Amplifiers Fabricated on InP Substrates

Jichai Jeong; G. P. Vella-Coleiro; C. M.L. Yee

doi:10.1049/el:19900092

GaAs Mesfet Amplifiers Fabricated on InP Substrates

Jichai Jeong, G. P. Vella-Coleiro, C. M.L. Yee

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers.

Original language	English
Pages (from-to)	135-136
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	2
DOIs	https://doi.org/10.1049/el:19900092
Publication status	Published - 1990 Jan

Keywords

Amplifiers
Field effect devices
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900092

Cite this

@article{d10429948f8a400e9820cc889cc02e35,

title = "GaAs Mesfet Amplifiers Fabricated on InP Substrates",

abstract = "Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers.",

keywords = "Amplifiers, Field effect devices, Semiconductor devices and materials",

author = "Jichai Jeong and Vella-Coleiro, {G. P.} and Yee, {C. M.L.}",

year = "1990",

month = jan,

doi = "10.1049/el:19900092",

language = "English",

volume = "26",

pages = "135--136",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "2",

}

TY - JOUR

T1 - GaAs Mesfet Amplifiers Fabricated on InP Substrates

AU - Jeong, Jichai

AU - Vella-Coleiro, G. P.

AU - Yee, C. M.L.

PY - 1990/1

Y1 - 1990/1

N2 - Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers.

AB - Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3dB bandwidth of 1 GHz have been measured from the amplifiers.

KW - Amplifiers

KW - Field effect devices

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0025246826&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025246826&partnerID=8YFLogxK

U2 - 10.1049/el:19900092

DO - 10.1049/el:19900092

M3 - Article

AN - SCOPUS:0025246826

SN - 0013-5194

VL - 26

SP - 135

EP - 136

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

GaAs Mesfet Amplifiers Fabricated on InP Substrates

Abstract

Keywords

ASJC Scopus subject areas

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