GaAs Mesfet Amplifiers Fabricated on InP Substrates

Keyphrases

• Gallium Arsenide 100%
• MESFET 100%
• InP Substrate 100%
• Short-circuit Current 50%
• Close Proximity 50%
• Chloride 50%
• Cut-off Frequency 50%
• Reactor Systems 50%
• 3-dB Bandwidth 50%
• Current Gain 50%
• Maximum Transconductance 50%
• Single-stage Amplifier 50%
• GaAs MESFET 50%

Engineering

• Gallium Arsenide 100%
• Amplifier 100%
• Cutoff Frequency 50%
• Reactor System 50%
• Current Gain 50%
• Stage Amplifier 50%
• Close Proximity 50%
• Field Effect Transistor 50%