GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System

Jichai Jeong; C. M.L. Yee; G. P. Vella-Coleiro; P. R. Smith; S. N.G. Chu; P. S. Davisson; J. P. Paczkowski

doi:10.1109/55.56476

GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System

Jichai Jeong, C. M.L. Yee, G. P. Vella-Coleiro, P. R. Smith, S. N.G. Chu, P. S. Davisson, J. P. Paczkowski

Research output: Contribution to journal › Article › peer-review

Abstract

DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFET's) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FET's have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional TEM. The full width at half maximum of (400) reflection is 270” for a 3-μm-thick GaAs layer.

Original language	English
Pages (from-to)	285-287
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	7
DOIs	https://doi.org/10.1109/55.56476
Publication status	Published - 1990 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System",

abstract = "DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFET's) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FET's have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional TEM. The full width at half maximum of (400) reflection is 270” for a 3-μm-thick GaAs layer.",

author = "Jichai Jeong and Yee, {C. M.L.} and Vella-Coleiro, {G. P.} and Smith, {P. R.} and Chu, {S. N.G.} and Davisson, {P. S.} and Paczkowski, {J. P.}",

year = "1990",

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doi = "10.1109/55.56476",

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journal = "IEEE Electron Device Letters",

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T1 - GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System

AU - Jeong, Jichai

AU - Yee, C. M.L.

AU - Vella-Coleiro, G. P.

AU - Smith, P. R.

AU - Chu, S. N.G.

AU - Davisson, P. S.

AU - Paczkowski, J. P.

PY - 1990/7

Y1 - 1990/7

N2 - DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFET's) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FET's have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional TEM. The full width at half maximum of (400) reflection is 270” for a 3-μm-thick GaAs layer.

AB - DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFET's) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FET's have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6-μm GaAs layer on InP is 108 cm-2 measured from cross-sectional TEM. The full width at half maximum of (400) reflection is 270” for a 3-μm-thick GaAs layer.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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GaAs MESFET's on InP Substrates Grown Using Chloride Close-Proximity Reactor System

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