Abstract
A well-defined selective GaAs epilayers were successfully grown on V-grooved GaAs substrates by single-stage atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr 4) and carbon tetrachloride (CCl 4). Inside the V-grooves, the selectively grown GaAs epilayers exhibited a triangular and a round shape by supplying CBr 4 and CCl 4, respectively. By using this single-stage selective epitaxial growth technique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers were obtained. Room temperature operation was achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm-long uncoated cavity.
Original language | English |
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Pages (from-to) | S338-S341 |
Journal | Journal of the Korean Physical Society |
Volume | 33 |
Issue number | SUPPL. 2 |
Publication status | Published - 1998 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)