GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates

Eun Kyu Kim, Tae Geun Kim, Chang Sik Son, Sung Min Hwang, Yong Kim, Young K. Park, Suk Ki Min

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1 Citation (Scopus)


A well-defined selective GaAs epilayers were successfully grown on V-grooved GaAs substrates by single-stage atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr 4) and carbon tetrachloride (CCl 4). Inside the V-grooves, the selectively grown GaAs epilayers exhibited a triangular and a round shape by supplying CBr 4 and CCl 4, respectively. By using this single-stage selective epitaxial growth technique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers were obtained. Room temperature operation was achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm-long uncoated cavity.

Original languageEnglish
Pages (from-to)S338-S341
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 2
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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