GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates

A well-defined selective GaAs epilayers were successfully grown on V-grooved GaAs substrates by single-stage atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr ₄) and carbon tetrachloride (CCl ₄). Inside the V-grooves, the selectively grown GaAs epilayers exhibited a triangular and a round shape by supplying CBr ₄ and CCl ₄, respectively. By using this single-stage selective epitaxial growth technique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers were obtained. Room temperature operation was achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm-long uncoated cavity.