GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

Tae Geun Kim, Chang Sik Son, Eun Kyu Kim, Suk Ki Min, J. H. Park

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C-1 and the characteristic temperature T0 is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.

    Original languageEnglish
    Pages (from-to)570-574
    Number of pages5
    JournalSemiconductor Science and Technology
    Volume14
    Issue number6
    DOIs
    Publication statusPublished - 1999 Jun

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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