Abstract
We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C-1 and the characteristic temperature T0 is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.
Original language | English |
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Pages (from-to) | 570-574 |
Number of pages | 5 |
Journal | Semiconductor Science and Technology |
Volume | 14 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1999 Jun |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry