GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

Tae Geun Kim; Chang Sik Son; Eun Kyu Kim; Suk Ki Min; J. H. Park

doi:10.1088/0268-1242/14/6/314

GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

Tae Geun Kim, Chang Sik Son, Eun Kyu Kim, Suk Ki Min, J. H. Park

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C^-1 and the characteristic temperature T₀ is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.

Original language	English
Pages (from-to)	570-574
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	14
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/14/6/314
Publication status	Published - 1999 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/14/6/314

Cite this

@article{0b2b081f241648f0886668766241a0f7,

title = "GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique",

abstract = "We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C-1 and the characteristic temperature T0 is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.",

author = "Kim, {Tae Geun} and Son, {Chang Sik} and Kim, {Eun Kyu} and Min, {Suk Ki} and Park, {J. H.}",

year = "1999",

month = jun,

doi = "10.1088/0268-1242/14/6/314",

language = "English",

volume = "14",

pages = "570--574",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

AU - Kim, Tae Geun

AU - Son, Chang Sik

AU - Kim, Eun Kyu

AU - Min, Suk Ki

AU - Park, J. H.

PY - 1999/6

Y1 - 1999/6

N2 - We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C-1 and the characteristic temperature T0 is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.

AB - We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 μm long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 μm long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm °C-1 and the characteristic temperature T0 is measured to be 102 K in the range of 25 to 65 °C for a 500 μm long cavity.

UR - http://www.scopus.com/inward/record.url?scp=0032631240&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/14/6/314

DO - 10.1088/0268-1242/14/6/314

M3 - Article

AN - SCOPUS:0032631240

SN - 0268-1242

VL - 14

SP - 570

EP - 574

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this