GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer

Yeonhwa Kim, May Angelu Madarang, Eunkyo Ju, Tsimafei Laryn, Rafael Jumar Chu, Tae Soo Kim, Dae Hwan Ahn, Taehee Kim, In Hwan Lee, Won Jun Choi, Daehwan Jung

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells. Several micron-thick III–V compositionally graded buffers are typically grown to reduce the high threading dislocation density that arises due to the lattice mismatch between III–V and Si. Here, we show that optically transparent n-In0.1Al0.9As/n-GaAs strained layer superlattice dislocation filter layers can be used to reduce the threading dislocation density in the GaAs buffer on Si while maintaining the GaAs buffer thickness below 2 μm. Electron channeling contrast imaging measurements on the 2 μm n-GaAs/Si template revealed a threading dislocation density of 6 × 107 cm−2 owing to the effective n-In0.1Al0.9As/n-GaAs superlattice filter layers. Our GaAs/Si tandem cell showed an open-circuit voltage of 1.28 V, Si bottom cell limited short-circuit current of 7.2 mA/cm2, and an efficiency of 7.5%. This result paves the way toward monolithically integrated triple-junction solar cells on Si substrates.

Original languageEnglish
Article number1158
JournalEnergies
Volume16
Issue number3
DOIs
Publication statusPublished - 2023 Feb

Bibliographical note

Publisher Copyright:
© 2023 by the authors.

Keywords

  • Si tandem cell
  • molecular beam epitaxy
  • monolithic integration
  • solar cell

ASJC Scopus subject areas

  • Control and Optimization
  • Energy (miscellaneous)
  • Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Fuel Technology
  • Renewable Energy, Sustainability and the Environment

Fingerprint

Dive into the research topics of 'GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer'. Together they form a unique fingerprint.

Cite this