Gain-dependent linewidth enhancement factor in the quantum dot structures

Kyoung Chan Kim; Il Ki Han; Jung Il Lee; Tae Geun Kim

doi:10.1088/0957-4484/21/13/134010

Gain-dependent linewidth enhancement factor in the quantum dot structures

Kyoung Chan Kim, Il Ki Han, Jung Il Lee, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.

Original language	English
Article number	134010
Journal	Nanotechnology
Volume	21
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/21/13/134010
Publication status	Published - 2010

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/21/13/134010

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title = "Gain-dependent linewidth enhancement factor in the quantum dot structures",

abstract = "We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.",

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AU - Kim, Kyoung Chan

AU - Han, Il Ki

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AU - Kim, Tae Geun

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AB - We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The α factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large α factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.

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Gain-dependent linewidth enhancement factor in the quantum dot structures

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