Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

Michael A. Mastro; Byung Jae Kim; Younghun Jung; Jennifer K. Hite; Charles R. Eddy; Jihyun Kim

doi:10.1016/j.cap.2010.11.032

Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

Michael A. Mastro, Byung Jae Kim, Younghun Jung, Jennifer K. Hite, Charles R. Eddy, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO₂ nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.

Original language	English
Pages (from-to)	682-686
Number of pages	5
Journal	Current Applied Physics
Volume	11
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2010.11.032
Publication status	Published - 2011 May

Bibliographical note

Funding Information:
This research was supported by the Carbon Dioxide Reduction and SequestrationCenter, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea . The research at US Naval Research Lab was supported by the office of the Naval Research.

Keywords

A. Semiconductors
B. Epitaxy
D. Recombination and trapping
E. Luminescence

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2010.11.032

Cite this

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title = "Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency",

abstract = "Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO2 nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.",

keywords = "A. Semiconductors, B. Epitaxy, D. Recombination and trapping, E. Luminescence",

author = "Mastro, {Michael A.} and Kim, {Byung Jae} and Younghun Jung and Hite, {Jennifer K.} and Eddy, {Charles R.} and Jihyun Kim",

note = "Funding Information: This research was supported by the Carbon Dioxide Reduction and SequestrationCenter, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea . The research at US Naval Research Lab was supported by the office of the Naval Research.",

year = "2011",

month = may,

doi = "10.1016/j.cap.2010.11.032",

language = "English",

volume = "11",

pages = "682--686",

journal = "Current Applied Physics",

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AU - Mastro, Michael A.

AU - Kim, Byung Jae

AU - Jung, Younghun

AU - Hite, Jennifer K.

AU - Eddy, Charles R.

AU - Kim, Jihyun

N1 - Funding Information: This research was supported by the Carbon Dioxide Reduction and SequestrationCenter, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea . The research at US Naval Research Lab was supported by the office of the Naval Research.

PY - 2011/5

Y1 - 2011/5

N2 - Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO2 nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.

AB - Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO2 nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.

KW - A. Semiconductors

KW - B. Epitaxy

KW - D. Recombination and trapping

KW - E. Luminescence

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DO - 10.1016/j.cap.2010.11.032

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SN - 1567-1739

VL - 11

SP - 682

EP - 686

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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