This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures.
Bibliographical noteFunding Information:
This work was financially supported by the National Creative Research Initiative Project (Grant R16-2004-004-01001-0 ) of the Korea Science and Engineering Foundations (KOSEF) and the Future-based Technology Development Program (Nano Fields, 2010-0029325 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology .
- Gallium nitride
- Light-emitting diodes
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- General Materials Science
- Electrical and Electronic Engineering