Gan and other materials for semiconductor spintronics

S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, Jihyun Kim, F. Ren

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.

Original languageEnglish
Pages (from-to)288-297
Number of pages10
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2003 May
Externally publishedYes

Bibliographical note

Funding Information:
The work at UF was partially supported by NSF-DMR 0101438, CTS 991173, and ARO. The work at SNU was partially supported by KOSEF and Samsung Electronics Endowment through CSCMR. The authors are grateful to their collaborators A.F. Hebard, N.A. Theodoropoulou, R.G. Wilson, J.M. Zavada, D.P. Norton, S.N.G. Chu, J.S. Lee, and Z.G. Khim.


  • Ferromagnetic properties
  • GaP
  • Integrated magnetic sensors
  • Lasers
  • Semiconductors
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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