Gan and other materials for semiconductor spintronics

S. J. Pearton; Y. D. Park; C. R. Abernathy; M. E. Overberg; G. T. Thaler; Jihyun Kim; F. Ren

doi:10.1007/s11664-003-0147-6

Gan and other materials for semiconductor spintronics

S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, Jihyun Kim, F. Ren

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.

Original language	English
Pages (from-to)	288-297
Number of pages	10
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0147-6
Publication status	Published - 2003 May
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF was partially supported by NSF-DMR 0101438, CTS 991173, and ARO. The work at SNU was partially supported by KOSEF and Samsung Electronics Endowment through CSCMR. The authors are grateful to their collaborators A.F. Hebard, N.A. Theodoropoulou, R.G. Wilson, J.M. Zavada, D.P. Norton, S.N.G. Chu, J.S. Lee, and Z.G. Khim.

Keywords

Ferromagnetic properties
GaP
Integrated magnetic sensors
Lasers
Semiconductors
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-003-0147-6

Cite this

@article{c7423fb107e044a981b57227b31a3eaa,

title = "Gan and other materials for semiconductor spintronics",

abstract = "Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.",

keywords = "Ferromagnetic properties, GaP, Integrated magnetic sensors, Lasers, Semiconductors, Spintronics",

author = "Pearton, {S. J.} and Park, {Y. D.} and Abernathy, {C. R.} and Overberg, {M. E.} and Thaler, {G. T.} and Jihyun Kim and F. Ren",

note = "Funding Information: The work at UF was partially supported by NSF-DMR 0101438, CTS 991173, and ARO. The work at SNU was partially supported by KOSEF and Samsung Electronics Endowment through CSCMR. The authors are grateful to their collaborators A.F. Hebard, N.A. Theodoropoulou, R.G. Wilson, J.M. Zavada, D.P. Norton, S.N.G. Chu, J.S. Lee, and Z.G. Khim.",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0147-6",

language = "English",

volume = "32",

pages = "288--297",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Gan and other materials for semiconductor spintronics

AU - Pearton, S. J.

AU - Park, Y. D.

AU - Abernathy, C. R.

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Kim, Jihyun

AU - Ren, F.

N1 - Funding Information: The work at UF was partially supported by NSF-DMR 0101438, CTS 991173, and ARO. The work at SNU was partially supported by KOSEF and Samsung Electronics Endowment through CSCMR. The authors are grateful to their collaborators A.F. Hebard, N.A. Theodoropoulou, R.G. Wilson, J.M. Zavada, D.P. Norton, S.N.G. Chu, J.S. Lee, and Z.G. Khim.

PY - 2003/5

Y1 - 2003/5

N2 - Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.

AB - Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.

KW - Ferromagnetic properties

KW - GaP

KW - Integrated magnetic sensors

KW - Lasers

KW - Semiconductors

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=0037566753&partnerID=8YFLogxK

U2 - 10.1007/s11664-003-0147-6

DO - 10.1007/s11664-003-0147-6

M3 - Article

AN - SCOPUS:0037566753

SN - 0361-5235

VL - 32

SP - 288

EP - 297

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Gan and other materials for semiconductor spintronics

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this