GaN-based light-emitting diode with three-dimensional silver reflectors

B. J. Kim; H. Jung; S. H. Kim; J. Bang; J. Kim

doi:10.1109/LPT.2009.2016669

GaN-based light-emitting diode with three-dimensional silver reflectors

B. J. Kim, H. Jung, S. H. Kim, J. Bang, J. Kim

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO₂ nanospheres as the template. First, the hexagonal arrays of SiO₂ nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO₂ nanospheres were embedded into the BCB layer after heating, resulting in arrays of "nano-lenses" that were in the shape of convex hemispheres. The concave-shaped hemisphere arrays were produced by etching the SiO₂ nanospheres with an HF solution. Ag was deposited onto both patterns, concave and convex hemispheres, resulting in the formation of three-dimensional Ag reflectors. From the electroluminescence measurements, these Ag reflectors, which contained either concave or convex hemisphere patterns, were found to enhance the light output of GaN LEDs by as much as 29%-33%.

Original language	English
Pages (from-to)	700-702
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2009.2016669
Publication status	Published - 2009 Jun 1

Bibliographical note

Funding Information:
Manuscript received January 13, 2009; revised February 21, 2009. First published March 16, 2009; current version published May 08, 2009. This work was supported by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.

Keywords

Light extraction efficiency
Light-emitting diodes (LEDs)
Reflector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2009.2016669

Cite this

@article{e324af8e0c054d2b8601009899d4686c,

title = "GaN-based light-emitting diode with three-dimensional silver reflectors",

abstract = "We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO2 nanospheres as the template. First, the hexagonal arrays of SiO2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO2 nanospheres were embedded into the BCB layer after heating, resulting in arrays of {"}nano-lenses{"} that were in the shape of convex hemispheres. The concave-shaped hemisphere arrays were produced by etching the SiO2 nanospheres with an HF solution. Ag was deposited onto both patterns, concave and convex hemispheres, resulting in the formation of three-dimensional Ag reflectors. From the electroluminescence measurements, these Ag reflectors, which contained either concave or convex hemisphere patterns, were found to enhance the light output of GaN LEDs by as much as 29%-33%.",

keywords = "Light extraction efficiency, Light-emitting diodes (LEDs), Reflector",

author = "Kim, {B. J.} and H. Jung and Kim, {S. H.} and J. Bang and J. Kim",

note = "Funding Information: Manuscript received January 13, 2009; revised February 21, 2009. First published March 16, 2009; current version published May 08, 2009. This work was supported by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.",

year = "2009",

month = jun,

day = "1",

doi = "10.1109/LPT.2009.2016669",

language = "English",

volume = "21",

pages = "700--702",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - GaN-based light-emitting diode with three-dimensional silver reflectors

AU - Kim, B. J.

AU - Jung, H.

AU - Kim, S. H.

AU - Bang, J.

AU - Kim, J.

N1 - Funding Information: Manuscript received January 13, 2009; revised February 21, 2009. First published March 16, 2009; current version published May 08, 2009. This work was supported by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.

PY - 2009/6/1

Y1 - 2009/6/1

N2 - We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO2 nanospheres as the template. First, the hexagonal arrays of SiO2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO2 nanospheres were embedded into the BCB layer after heating, resulting in arrays of "nano-lenses" that were in the shape of convex hemispheres. The concave-shaped hemisphere arrays were produced by etching the SiO2 nanospheres with an HF solution. Ag was deposited onto both patterns, concave and convex hemispheres, resulting in the formation of three-dimensional Ag reflectors. From the electroluminescence measurements, these Ag reflectors, which contained either concave or convex hemisphere patterns, were found to enhance the light output of GaN LEDs by as much as 29%-33%.

AB - We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO2 nanospheres as the template. First, the hexagonal arrays of SiO2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO2 nanospheres were embedded into the BCB layer after heating, resulting in arrays of "nano-lenses" that were in the shape of convex hemispheres. The concave-shaped hemisphere arrays were produced by etching the SiO2 nanospheres with an HF solution. Ag was deposited onto both patterns, concave and convex hemispheres, resulting in the formation of three-dimensional Ag reflectors. From the electroluminescence measurements, these Ag reflectors, which contained either concave or convex hemisphere patterns, were found to enhance the light output of GaN LEDs by as much as 29%-33%.

KW - Light extraction efficiency

KW - Light-emitting diodes (LEDs)

KW - Reflector

UR - http://www.scopus.com/inward/record.url?scp=66549100702&partnerID=8YFLogxK

U2 - 10.1109/LPT.2009.2016669

DO - 10.1109/LPT.2009.2016669

M3 - Article

AN - SCOPUS:66549100702

SN - 1041-1135

VL - 21

SP - 700

EP - 702

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

GaN-based light-emitting diode with three-dimensional silver reflectors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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