GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact

June O. Song, Dong Seok Leem, Sang Ho Kim, J. S. Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Novel Ni-Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed at 550 °C for 1 min in air ambient produce a specific contact resistivity of 3.0 × 10-5 Ωcm2. The light transmittance of the annealed samples is about 95% at a wavelength of 470 nm. GaN-based light-emitting diodes (LEDs) made with the annealed Ni-Mg solid solution/Au p-contact layers are fabricated. The typical I-V characteristics of the green LEDs with the annealed p-type contact layers reveal a forward-bias voltage of 3.32 V at an injection current of 20 mA, which is much better than that of the LEDs with Ni/Au contact layers.

Original languageEnglish
Pages (from-to)1597-1600
Number of pages4
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2004 Sept
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the Basic Research program of the Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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