GaN enhancement mode metal-oxide semiconductor field effect transistors

The initial demonstration of an enhancement mode MgO/p-GaN metal-oxide semiconductor field effect transistor (MOSFET) utilizing Si⁺ ion implanted regions under the source and drain to provide a source of minority carriers for inversion was reported. The breakdown voltage for an 80 nm thick MgO gate dielectric was ∼14 V, corresponding to a breakdown field strength of 1.75 MVcm^-1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage >15 V. Inversion of the channel was achieved for gate voltages above 6 V.The maximum transconductance was 5.4 μSmm^-1 at a drain-source voltage of 5 V.