GaN enhancement mode metal-oxide semiconductor field effect transistors
- Y. Irokawa*
- , Y. Nakano
- , M. Ishiko
- , T. Kachi
- , J. Kim
- , F. Ren
- , B. P. Gila
- , A. H. Onstine
- , C. R. Abernathy
- , S. J. Pearton
- , C. C. Pan
- , G. T. Chen
- , J. I. Chyi
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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