GaN nanowire lasers with low lasing thresholds

Silvija Gradečak, Fang Qian, Yat Li, Hong Gyu Park, Charles M. Lieber

Research output: Contribution to journalArticlepeer-review

456 Citations (Scopus)


We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.

Original languageEnglish
Article number173111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2005 Oct 24
Externally publishedYes

Bibliographical note

Funding Information:
The authors thank R. Agarwal and C. J. Barrelet for helpful discussions and technical help. Two of the authors (S. G. and Y. L.) acknowledge the Swiss National Science Foundation and Croucher Foundation, respectively, for fellowship support. We thank the Air Force of Scientific Research and Defense Advanced Research Projects Agency for support of this work, and Thomas-Swan Scientific Equipment, Ltd. for support of the MOCVD system.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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