GaN nanowire lasers with low lasing thresholds

Silvija Gradečak; Fang Qian; Yat Li; Hong Gyu Park; Charles M. Lieber

doi:10.1063/1.2115087

GaN nanowire lasers with low lasing thresholds

Silvija Gradečak, Fang Qian, Yat Li, Hong Gyu Park, Charles M. Lieber

Research output: Contribution to journal › Article › peer-review

451 Citations (Scopus)

Abstract

We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.

Original language	English
Article number	173111
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	17
DOIs	https://doi.org/10.1063/1.2115087
Publication status	Published - 2005 Oct 24
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "GaN nanowire lasers with low lasing thresholds",

abstract = "We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.",

author = "Silvija Grade{\v c}ak and Fang Qian and Yat Li and Park, {Hong Gyu} and Lieber, {Charles M.}",

note = "Funding Information: The authors thank R. Agarwal and C. J. Barrelet for helpful discussions and technical help. Two of the authors (S. G. and Y. L.) acknowledge the Swiss National Science Foundation and Croucher Foundation, respectively, for fellowship support. We thank the Air Force of Scientific Research and Defense Advanced Research Projects Agency for support of this work, and Thomas-Swan Scientific Equipment, Ltd. for support of the MOCVD system.",

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doi = "10.1063/1.2115087",

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T1 - GaN nanowire lasers with low lasing thresholds

AU - Gradečak, Silvija

AU - Qian, Fang

AU - Li, Yat

AU - Park, Hong Gyu

AU - Lieber, Charles M.

N1 - Funding Information: The authors thank R. Agarwal and C. J. Barrelet for helpful discussions and technical help. Two of the authors (S. G. and Y. L.) acknowledge the Swiss National Science Foundation and Croucher Foundation, respectively, for fellowship support. We thank the Air Force of Scientific Research and Defense Advanced Research Projects Agency for support of this work, and Thomas-Swan Scientific Equipment, Ltd. for support of the MOCVD system.

PY - 2005/10/24

Y1 - 2005/10/24

N2 - We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.

AB - We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 〈11-20〉 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Ṕrot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.

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DO - 10.1063/1.2115087

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

GaN nanowire lasers with low lasing thresholds

Abstract

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