Abstract
Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor-liquid-solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p-n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs.
| Original language | English |
|---|---|
| Article number | 261116 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 2013 Dec 23 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. NRF-2013R1A1A2058744). The work by S. J. An was supported by the Gyeongbuk Science & Technology Promotion Center (GBSP) Grant funded by the MEST (No. GBSP-001-111201-001). The research of Seoul National University was supported by Future-based Technology Development Program (Nano Fields) through the NRF funded by the MEST (No. 2010-0029325).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)