Gan power rectifiers and field-effect transistors on free-standing gan substrates

Y. Irokawa; B. Luo; Jihyun Kim; B. S. Kang; J. R. Laroche; F. Ren; C. C. Pan; G. T. Chen; J. I. Chyi; S. S. Park; Y. J. Park; B. P. Gila; C. R. Abernathy; K. H. Baik; S. J. Pearton

Gan power rectifiers and field-effect transistors on free-standing gan substrates

Y. Irokawa^*
, B. Luo
, Jihyun Kim
, B. S. Kang
, J. R. Laroche
, F. Ren
, C. C. Pan
, G. T. Chen
, J. I. Chyi
, S. S. Park
, Y. J. Park
, B. P. Gila
, C. R. Abernathy
, K. H. Baik
, S. J. Pearton

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

There are emerging applications for GaN and electronics in control and switching of electric power in the utilities industry, advanced radar sub-systems, and in the drive-trains of hybrid electric vehicles. The key components of the inverter modules for such applications are the power rectifier and transistor. P-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance was ∼5 mΩ·cm ² at 300 K. The figure-of-merit was 0.32 MW·cm ². The reverse recovery time was ≤ 600 ns at 300 K. A comparison of the DC and pulsed characteristics of AlGaN/GaN HFETs on both GaN and Al ₂O ₃ substrates before and after Sc ₂O ₃ passivation was performed. HFETs on GaN substrates show less electron accumulation in the gate-drain surface region than do comparable devices on Al ₂O ₃ substrates.

Original language	English
Pages	306-320
Number of pages	15
Publication status	Published - 2003
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 2003 Oct 12 → 2003 Oct 17

Other

Other	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	03/10/12 → 03/10/17

ASJC Scopus subject areas

General Engineering

Cite this

Irokawa, Y., Luo, B., Kim, J., Kang, B. S., Laroche, J. R., Ren, F., Pan, C. C., Chen, G. T., Chyi, J. I., Park, S. S., Park, Y. J., Gila, B. P., Abernathy, C. R., Baik, K. H., & Pearton, S. J. (2003). Gan power rectifiers and field-effect transistors on free-standing gan substrates. 306-320. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Gan power rectifiers and field-effect transistors on free-standing gan substrates. / Irokawa, Y.; Luo, B.; Kim, Jihyun et al.
2003. 306-320 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

Irokawa, Y, Luo, B, Kim, J, Kang, BS, Laroche, JR, Ren, F, Pan, CC, Chen, GT, Chyi, JI, Park, SS, Park, YJ, Gila, BP, Abernathy, CR, Baik, KH & Pearton, SJ 2003, 'Gan power rectifiers and field-effect transistors on free-standing gan substrates', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12 - 03/10/17 pp. 306-320.

Irokawa Y, Luo B, Kim J, Kang BS, Laroche JR, Ren F et al.. Gan power rectifiers and field-effect transistors on free-standing gan substrates. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

@conference{4cd087ece5eb4ed886a0a213e3945602,

title = "Gan power rectifiers and field-effect transistors on free-standing gan substrates",

abstract = "There are emerging applications for GaN and electronics in control and switching of electric power in the utilities industry, advanced radar sub-systems, and in the drive-trains of hybrid electric vehicles. The key components of the inverter modules for such applications are the power rectifier and transistor. P-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance was ∼5 mΩ·cm 2 at 300 K. The figure-of-merit was 0.32 MW·cm 2. The reverse recovery time was ≤ 600 ns at 300 K. A comparison of the DC and pulsed characteristics of AlGaN/GaN HFETs on both GaN and Al 2O 3 substrates before and after Sc 2O 3 passivation was performed. HFETs on GaN substrates show less electron accumulation in the gate-drain surface region than do comparable devices on Al 2O 3 substrates.",

author = "Y. Irokawa and B. Luo and Jihyun Kim and Kang, \{B. S.\} and Laroche, \{J. R.\} and F. Ren and Pan, \{C. C.\} and Chen, \{G. T.\} and Chyi, \{J. I.\} and Park, \{S. S.\} and Park, \{Y. J.\} and Gila, \{B. P.\} and Abernathy, \{C. R.\} and Baik, \{K. H.\} and Pearton, \{S. J.\}",

note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

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language = "English",

pages = "306--320",

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TY - CONF

T1 - Gan power rectifiers and field-effect transistors on free-standing gan substrates

AU - Irokawa, Y.

AU - Luo, B.

AU - Kim, Jihyun

AU - Kang, B. S.

AU - Laroche, J. R.

AU - Ren, F.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Park, S. S.

AU - Park, Y. J.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Baik, K. H.

AU - Pearton, S. J.

PY - 2003

Y1 - 2003

N2 - There are emerging applications for GaN and electronics in control and switching of electric power in the utilities industry, advanced radar sub-systems, and in the drive-trains of hybrid electric vehicles. The key components of the inverter modules for such applications are the power rectifier and transistor. P-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance was ∼5 mΩ·cm 2 at 300 K. The figure-of-merit was 0.32 MW·cm 2. The reverse recovery time was ≤ 600 ns at 300 K. A comparison of the DC and pulsed characteristics of AlGaN/GaN HFETs on both GaN and Al 2O 3 substrates before and after Sc 2O 3 passivation was performed. HFETs on GaN substrates show less electron accumulation in the gate-drain surface region than do comparable devices on Al 2O 3 substrates.

AB - There are emerging applications for GaN and electronics in control and switching of electric power in the utilities industry, advanced radar sub-systems, and in the drive-trains of hybrid electric vehicles. The key components of the inverter modules for such applications are the power rectifier and transistor. P-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance was ∼5 mΩ·cm 2 at 300 K. The figure-of-merit was 0.32 MW·cm 2. The reverse recovery time was ≤ 600 ns at 300 K. A comparison of the DC and pulsed characteristics of AlGaN/GaN HFETs on both GaN and Al 2O 3 substrates before and after Sc 2O 3 passivation was performed. HFETs on GaN substrates show less electron accumulation in the gate-drain surface region than do comparable devices on Al 2O 3 substrates.

UR - https://www.scopus.com/pages/publications/5744249748

M3 - Paper

AN - SCOPUS:5744249748

SP - 306

EP - 320

T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Gan power rectifiers and field-effect transistors on free-standing gan substrates

Abstract

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ASJC Scopus subject areas

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