GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

Sasikala Ganapathy; Xi Qing Zhang; Ikuo Suemune; Katsuhiro Uesugi; Hidekazu Kumano; B. J. Kim; Tae Yeon Seong

doi:10.1143/jjap.42.5598

GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

Sasikala Ganapathy, Xi Qing Zhang, Ikuo Suemune, Katsuhiro Uesugi, Hidekazu Kumano, B. J. Kim, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

Original language	English
Pages (from-to)	5598-5601
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	9 A
DOIs	https://doi.org/10.1143/jjap.42.5598
Publication status	Published - 2003 Sept
Externally published	Yes

Keywords

GaNAs
InAs quantum dot
Long-wavelength
Photoluminescence
Strain compensating layer (SCL)

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.42.5598

Cite this

@article{1bfbbd00090e4c608b56af4b2cc8fbc6,

title = "GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots",

abstract = "GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.",

keywords = "GaNAs, InAs quantum dot, Long-wavelength, Photoluminescence, Strain compensating layer (SCL)",

author = "Sasikala Ganapathy and Zhang, {Xi Qing} and Ikuo Suemune and Katsuhiro Uesugi and Hidekazu Kumano and Kim, {B. J.} and Seong, {Tae Yeon}",

year = "2003",

month = sep,

doi = "10.1143/jjap.42.5598",

language = "English",

volume = "42",

pages = "5598--5601",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 A",

}

TY - JOUR

T1 - GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

AU - Ganapathy, Sasikala

AU - Zhang, Xi Qing

AU - Suemune, Ikuo

AU - Uesugi, Katsuhiro

AU - Kumano, Hidekazu

AU - Kim, B. J.

AU - Seong, Tae Yeon

PY - 2003/9

Y1 - 2003/9

N2 - GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

AB - GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

KW - GaNAs

KW - InAs quantum dot

KW - Long-wavelength

KW - Photoluminescence

KW - Strain compensating layer (SCL)

UR - http://www.scopus.com/inward/record.url?scp=0344063420&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.5598

DO - 10.1143/jjap.42.5598

M3 - Article

AN - SCOPUS:0344063420

SN - 0021-4922

VL - 42

SP - 5598

EP - 5601

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 9 A

ER -

GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this