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GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots
Sasikala Ganapathy
*
, Xi Qing Zhang
, Ikuo Suemune
, Katsuhiro Uesugi
, Hidekazu Kumano
, B. J. Kim
,
Tae Yeon Seong
*
Corresponding author for this work
Research output
:
Contribution to journal
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Article
›
peer-review
29
Citations (Scopus)
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Keyphrases
Light Emission
100%
GaNAs
100%
InAs Quantum Dots
100%
Long Wavelength
14%
Photoluminescence
14%
GaAs Substrate
14%
Total Strain
14%
Luminescence
14%
Light Source
14%
Main Idea
14%
Tensile Strain
14%
Compressive Strain
14%
Long Wavelength Light
14%
Nitrogen N
14%
Strain-induced
14%
Optical Fiber Communication Systems
14%
Engineering
Quantum Dot
100%
Light Emission
100%
Phase Composition
33%
Gaas Substrate
16%
Communication System
16%
Main Idea
16%
Tensile Strain
16%
Light Source
16%
Compressive Strain
16%
Fiber-Optic Communication
16%