GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

Chul Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong Jin Kim, Seong Ran Jeon, Jong Hyeob Baek, Gyu Chul Yi

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65 Citations (Scopus)


We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.

Original languageEnglish
Article number213101
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2009
Externally publishedYes

Bibliographical note

Funding Information:
This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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