GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

Chul Ho Lee; Jinkyoung Yoo; Young Joon Hong; Jeonghui Cho; Yong Jin Kim; Seong Ran Jeon; Jong Hyeob Baek; Gyu Chul Yi

doi:10.1063/1.3139865

GaN/In_1-xGa_xN/GaN/ZnO nanoarchitecture light emitting diode microarrays

Chul Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong Jin Kim, Seong Ran Jeon, Jong Hyeob Baek, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.

Original language	English
Article number	213101
Journal	Applied Physics Letters
Volume	94
Issue number	21
DOIs	https://doi.org/10.1063/1.3139865
Publication status	Published - 2009
Externally published	Yes

Bibliographical note

Funding Information:
This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3139865

Cite this

@article{d8d28e01769d4769b9c018851535716e,

title = "GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays",

abstract = "We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.",

author = "Lee, {Chul Ho} and Jinkyoung Yoo and Hong, {Young Joon} and Jeonghui Cho and Kim, {Yong Jin} and Jeon, {Seong Ran} and Baek, {Jong Hyeob} and Yi, {Gyu Chul}",

note = "Funding Information: This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).",

year = "2009",

doi = "10.1063/1.3139865",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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T1 - GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

AU - Lee, Chul Ho

AU - Yoo, Jinkyoung

AU - Hong, Young Joon

AU - Cho, Jeonghui

AU - Kim, Yong Jin

AU - Jeon, Seong Ran

AU - Baek, Jong Hyeob

AU - Yi, Gyu Chul

N1 - Funding Information: This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).

PY - 2009

Y1 - 2009

N2 - We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.

AB - We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.

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