GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si

Chul Ho Lee; Young Joon Hong; Yong Jin Kim; Jinkyoung Yoo; Hyeonjun Baek; Seong Ran Jeon; Seung Jae Lee; Gyu Chul Yi

doi:10.1109/JSTQE.2010.2062493

GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si

Chul Ho Lee, Young Joon Hong, Yong Jin Kim, Jinkyoung Yoo, Hyeonjun Baek, Seong Ran Jeon, Seung Jae Lee, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In _1-xGa_xN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.

Original language	English
Article number	5579990
Pages (from-to)	966-970
Number of pages	5
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2062493
Publication status	Published - 2011 Jul
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received June 29, 2010; revised July 23, 2010; accepted July 23, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Creative Research Initiative under Project R16–2004-004–01001-0 of the Korea Science and Engineering Foundations.

Keywords

Light-emitting diode (LED)
Si
ZnO
nanoepitaxy
nanophotonics

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2010.2062493

Cite this

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title = "GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si",

abstract = "We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In 1-xGaxN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.",

keywords = "Light-emitting diode (LED), Si, ZnO, nanoepitaxy, nanophotonics",

author = "Lee, {Chul Ho} and Hong, {Young Joon} and Kim, {Yong Jin} and Jinkyoung Yoo and Hyeonjun Baek and Jeon, {Seong Ran} and Lee, {Seung Jae} and Yi, {Gyu Chul}",

note = "Funding Information: Manuscript received June 29, 2010; revised July 23, 2010; accepted July 23, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Creative Research Initiative under Project R16–2004-004–01001-0 of the Korea Science and Engineering Foundations.",

year = "2011",

month = jul,

doi = "10.1109/JSTQE.2010.2062493",

language = "English",

volume = "17",

pages = "966--970",

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AU - Lee, Chul Ho

AU - Hong, Young Joon

AU - Kim, Yong Jin

AU - Yoo, Jinkyoung

AU - Baek, Hyeonjun

AU - Jeon, Seong Ran

AU - Lee, Seung Jae

AU - Yi, Gyu Chul

N1 - Funding Information: Manuscript received June 29, 2010; revised July 23, 2010; accepted July 23, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Creative Research Initiative under Project R16–2004-004–01001-0 of the Korea Science and Engineering Foundations.

PY - 2011/7

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N2 - We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In 1-xGaxN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.

AB - We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In 1-xGaxN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.

KW - Light-emitting diode (LED)

KW - Si

KW - ZnO

KW - nanoepitaxy

KW - nanophotonics

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ER -

GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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